2N5769 pn2369a npn silicon transistor description: the central semiconductor 2N5769 and pn2369a are epitaxial planar npn silicon transistors designed for ultra high speed saturated switching applications. marking: full part number maximum ratings: (t a =25c) symbol units collector-base voltage v cbo 40 v collector-emitter voltage v ces 40 v collector-emitter voltage v ceo 15 v emitter-base voltage v ebo 4.5 v continuous collector current i c 200 ma peak collector current i cm 500 ma power dissipation p d 350 mw operating and storage junction temperature t j , t stg -65 to +150 c electrical characteristics: (t a =25c unless otherwise noted) symbol test conditions min max units i cbo v cb =20v 400 na i cbo v cb =20v, t a =125c 30 a i ces v ce =20v (2N5769) 400 na i ebo v eb =4.5v (2N5769) 1.0 a bv cbo i c =10a 40 v bv ces i c =10a 40 v bv ceo i c =10ma 15 v bv ebo i e =10a 4.5 v v ce(sat) i c =10ma, i b =1.0ma 200 mv v ce(sat) i c =30ma, i b =3.0ma 250 mv v ce(sat) i c =100ma, i b =10ma 500 mv v be(sat) i c =10ma, i b =1.0ma 700 850 mv v be(sat) i c =30ma, i b =3.0ma 1.15 v v be(sat) i c =100ma, i b =10ma 1.6 v h fe v ce =0.35v, i c =10ma (2N5769) 40 120 h fe v ce =1.0v, i c =10ma (pn2369a) 40 120 h fe v ce =0.4v, i c =30ma 30 h fe v ce =1.0v, i c =100ma 20 to-92 case r1 (10-march 2011) www.centralsemi.com
2N5769 pn2369a npn silicon transistor to-92 case - mechanical outline lead code: 1) emitter 2) base 3) collector marking: full part number electrical characteristics - continued: (t a =25c unless otherwise noted) symbol test conditions min max units f t v ce =10v, i c =10ma, f=100mhz 500 mhz c ob v cb =5.0v, i e =0, f=140khz 4.0 pf c ib v eb =5.0v, i c =0, f=1.0mhz (pn2369a) 5.0 pf t on v cc =3.0v, i c =10ma, i b1 =3.0ma, i b2 =1.5ma 12 ns t off v cc =3.0v, i c =10ma, i b1 =3.0ma, i b2 =1.5ma 18 ns t s v cc =10v, i c =10ma, i b1 =i b2 =10ma 13 ns www.centralsemi.com r1 (10-march 2011)
|
